(Invited) Using Surface Chemistry to Direct the Deposition of Nano-objects for Electronics
(Invited) Using Surface Chemistry to Direct the Deposition of Nano-objects for Electronics
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（特邀）利用表面化学指导电子纳米物体的沉积
DOI：
10.1149/08603.0089ecst
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Walker, Amy V
中科院分区：
文献类型：
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作者：
Hedlund, Jenny K.;Ellsworth, Ashley A.;Walker, Amy V
纳米物体的实际应用中的主要挑战之一是以可控的方式将其集成到复杂的结构中。我们已经开发了两种有前途的技术，通过它们来指导金属和半导体纳米物体的原位生长。ENDOM或微图案化衬底上的无电纳米线沉积采用无电沉积，而SENDOM或微图案化衬底上的半导体纳米线沉积采用化学浴沉积。在ENDOM中，可以使用浴添加剂的浓度来控制纳米线对衬底的粘附。利用这种效应，我们表明，铜纳米线可以转移到各种基板。转移后，纳米线保持其尺寸、结构完整性、图案和性质。使用SENDOM，我们表明，纳米线的形成是由硫属离子与表面的相互作用控制的，因此是强烈的pH依赖性。
One of the major challenges in the practical use of nano-objects is their integration into complex structures in a controlled way. We have developed two promising techniques by which to direct the in situ growth of metallic and semiconducting nano-objects. ENDOM, or Electroless Nanowire Deposition on Micropatterned substrates, employs electroless deposition, while SENDOM, or SEmiconductor Nanowire Deposition on Micropatterned substrates, uses chemical bath deposition. In ENDOM nanowire adhesion to the substrate can be controlled using the concentration of bath additives. Using this effect we show that copper nanowires can be transferred to a variety of substrates. After transfer, the nanowires maintain their size, structural integrity, pattern and properties. Using SENDOM, we show that the nanowire formation is controlled by the interaction of a chalcogenide ion with the surface, and consequently is strongly pH dependent.