Loss reduction of Si wire waveguide fabricated by edge-enhancement writing for electron beam lithography and reactive ion etching using double layered resist mask with C60
Loss reduction of Si wire waveguide fabricated by edge-enhancement writing for electron beam lithography and reactive ion etching using double layered resist mask with C60
复制标题
使用 C60 双层抗蚀剂掩模通过电子束光刻和反应离子蚀刻的边缘增强写入制造硅线波导的损耗减少
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
T. Maruyama and S. Arai
中科院分区：
文献类型：
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作者：
K. Inoue;D. Plumwongrot;N. Nishiyama;S. Sakamoto;H. Enomoto;S. Tamura;T. Maruyama and S. Arai
