Single-Layer MoS2 Phototransistors
Single-Layer MoS2 Phototransistors
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DOI：
10.1021/nn2024557
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发表时间：
2012-01-01
期刊：
影响因子：
17.1
通讯作者：
Zhang, Hua
中科院分区：
文献类型：
--
作者：
Yin, Zongyou;Li, Hai;Zhang, Hua
制备了一种基于机械剥离单层二硫化钼纳米片的新型光电晶体管，并对其光致电学性能进行了详细的研究。光电晶体管产生的光电流完全由恒定漏极或栅极电压下照射的光功率决定。光电流产生和湮灭的开关行为可在约50 ms内完全完成，且具有良好的稳定性。特别是，与基于石墨烯的器件相比，单层MoS2光电晶体管表现出更好的光响应性。MoS2光电晶体管独特的入射光控制、快速的光开关和良好的光响应性为未来开发用于多功能光电器件的单层半导体材料铺平了道路。
A new phototransistor based on the mechanically exfoliated single-layer MoS2 nanosheet is fabricated, and Its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of Incident-light control, prompt photoswitching, and good photoresponsivity from the MoS2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.