Development of thin‐film Cu(In,Ga)Se2 and CdTe solar cells
Development of thin‐film Cu(In,Ga)Se2 and CdTe solar cells
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DOI：
10.1002/pip.527
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发表时间：
2004-03
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影响因子：
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通讯作者：
A. Romeo;M. Terheggen;D. Abou‐Ras;D. Bätzner;F. Haug;Marc Kälin;D. Rudmann;A. Tiwari
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文献类型：
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作者：
A. Romeo;M. Terheggen;D. Abou‐Ras;D. Bätzner;F. Haug;Marc Kälin;D. Rudmann;A. Tiwari
在刚性（玻璃）或柔性箔基板上生长的Cu（In，Ga）Se 2和CdTe异质结太阳能电池需要具有最佳光电性能的p型吸收层和n型宽带隙配对层来形成p-n结。透明导电氧化物和特定金属层用于前和后电接触。太阳能电池的效果取决于各种沉积方法，因为它们控制层和界面的光电性质。某些处理，如在Cu（In，Ga）Se 2中添加Na和CdTe的CdCl 2处理，对吸收层的电子性质和太阳能电池的效率具有直接影响。综述了基片太阳能电池和覆层太阳能电池的发展过程。版权所有© 2004年约翰威利父子有限公司。
Cu(In,Ga)Se2 and CdTe heterojunction solar cells grown on rigid (glass) or flexible foil substrates require p‐type absorber layers of optimum optoelectronic properties and n‐type wide‐bandgap partner layers to form the p–n junction. Transparent conducting oxide and specific metal layers are used for front and back electrical contacts. Efficiencies of solar cells depend on various deposition methods as they control the optoelectronic properties of the layers and interfaces. Certain treatments, such as addition of Na in Cu(In,Ga)Se2 and CdCl2 treatment of CdTe have a direct influence on the electronic properties of the absorber layers and efficiency of solar cells. Processes for the development of superstrate and substrate solar cells are reviewed. Copyright © 2004 John Wiley & Sons, Ltd.