Analysis of dual-gate LIGBT with gradual hole injection
Analysis of dual-gate LIGBT with gradual hole injection
复制标题
DOI：
10.1109/16.944210
复制
发表时间：
2001-09
影响因子：
3.1
通讯作者：
You-Sang Lee;Byeong-hoon Lee;Won-Oh Lee;M. Han;Yearn-Ik Choi
中科院分区：
文献类型：
--
作者：
You-Sang Lee;Byeong-hoon Lee;Won-Oh Lee;M. Han;Yearn-Ik Choi
The device characteristics of a gradual hole injection dual-gate lateral insulated gate bipolar transistor (GHI-LIGBT) is analyzed with the experiment and two-dimensional (2-D) numerical simulation. The hole injection mechanism in the GHI-LIGBT is investigated in detail and the device characteristics of the GHI-LIGBT are studied in terms of the various device parameters such as the p/sup +/ injector length and the injection gate length. The hole injection characteristics and latch-up characteristics in the GHI-LIGBT are also presented as a function of temperature. The experimental results demonstrate that an on-state voltage drop in GHI-LIGBT is reduced by 1 V, compared with the conventional SA-LIGBT and the negative resistance regime is eliminated since the injection of holes is initiated at the lower anode voltage. It is also found that the low on-state voltage drop in the GHI-LIGBT can be achieved without sacrificing the inherent high switching speed in shorted anode (SA) LIGBT structures.
