In2O3:H transparent conductive oxide films with high mobility and near infrared transparency for optoelectronic applications
In2O3:H transparent conductive oxide films with high mobility and near infrared transparency for optoelectronic applications
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DOI：
10.1179/1743294411y.0000000053
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发表时间：
2012-03
影响因子：
2.8
通讯作者：
T. Koida;H. Sai;M. Kondo
中科院分区：
文献类型：
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作者：
T. Koida;H. Sai;M. Kondo
掺氢In_2O_3(In_2O_3：H)薄膜在可见光和近红外波段具有高电导率、小的折射率色散和很低的消光系数。这种性能的改善使这种透明导电氧化物成为光电子器件窗口电极的理想候选者。本文介绍了In_2O_3：H的微观结构控制、结构与输运性能的关系以及采用In_2O_3：H窗口电极的硅基太阳电池。
Hydrogen doped In2O3 (In2O3:H) films show high conductivity, small dispersion of refractive index and very low extinction coefficient in the visible to near infrared wavelengths. The improved properties make this transparent conducting oxide an ideal candidate for a window electrode of optoelectronic devices. This article describes the control of microstructure of In2O3:H, the relationship between the structure and transport properties and the Si based solar cells incorporating the In2O3:H window electrode.