Stress relaxation and stability in thick amorphous carbon films deposited in layer structure
Stress relaxation and stability in thick amorphous carbon films deposited in layer structure
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DOI：
10.1063/1.121749
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发表时间：
1998-07-13
影响因子：
4
通讯作者：
Charitidis, C
中科院分区：
文献类型：
--
作者：
Gioti, M;Logothetidis, S;Charitidis, C
We have developed amorphous carbon films in sequential layers and studied their intrinsic stress, composition, and stress relief mechanisms. The films were deposited by sputtering either thin, with fixed bias voltage V-b or thick, with alternative (positive-layer A/negative-layer B) V-b. In situ spectroscopic ellipsometry and stress studies were used and supported by nanoindentation and x-ray reflectivity measurements. The films deposited with fixed negative (positive) V-b exhibit a thickness-dependent increase (decrease) of compressive stresses up to 200 Angstrom and saturate at 6(1) GPa. In thick films deposited with alternative V-b the results demonstrate that: (1) the same modulation in stress values and sp(3) content versus film thickness exists, supporting their direct interrelation; (2) the A layers (rich in sp(2) sites) promote the stress relaxation of the films during a compositional rearrangement when a B layer is deposited; and (3) this process develops thick and stable films with lower stresses. (C) 1998 American Institute of Physics.
