Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard's law
Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard's law
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DOI：
10.1063/1.1370549
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发表时间：
2001-05-07
影响因子：
4
通讯作者：
Likonen, J
中科院分区：
文献类型：
--
作者：
Li, W;Pessa, M;Likonen, J
采用二次离子质谱法和x射线衍射法分别测定了GaAs （0 < x < 0.03）上GaN(x)As（1-x）薄膜的N含量和晶格参数。在GaAs和立方GaN之间观察到GaNxAs1-x晶格参数变化与Vegard定律的显著偏差，这导致x小于或等于2.5%时氮含量的高估高达30%。讨论了这种负偏差的物理根源。(C) 2001年美国物理研究所。
The N content and lattice parameter of GaN(x)As(1-x)epilayers on GaAs (0 < x < 0.03) were determined by secondary ion mass spectroscopy and x-ray diffraction measurements, respectively. A significant deviation of the lattice parameter variation in GaNxAs1-x from Vegard's law between GaAs and cubic GaN was observed, which leads to overestimation of the nitrogen content by up to 30% for x less than or equal to 2.5%. The physical origin of this negative deviation is discussed. (C) 2001 American Institute of Physics.