Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper
Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper
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DOI：
10.1021/ja109793s
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发表时间：
2011-03-09
影响因子：
15
通讯作者：
Ruoff, Rodney S.
中科院分区：
文献类型：
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作者：
Li, Xuesong;Magnuson, Carl W.;Ruoff, Rodney S.
石墨烯单晶以甲烷为前体，在铜箔外壳中用低压化学气相沉积法生长，单晶的边长可达0.5毫米。低能电镜分析表明，大的石墨烯畴具有单晶取向，偶尔有两个取向的畴。拉曼光谱显示石墨烯单晶是均匀的单层，具有低d波段强度。在室温下，从场效应晶体管测量中提取的石墨烯薄膜的电子迁移率高于4000 cm(2) V(-1) s（-1）。
Graphene single crystals with dimensions of up to 0.5 mm on a side were grown by low-pressure chemical vapor deposition in copper-foil enclosures using methane as a precursor. Low-energy electron microscopy analysis showed that the large graphene domains had a single crystallographic orientation, with an occasional domain having two orientations. Raman spectroscopy revealed the graphene single crystals to be uniform monolayers with a low D-band intensity. The electron mobility of graphene films extracted from field-effect transistor measurements was found to be higher than 4000 cm(2) V(-1) s(-1) at room temperature.