Li-based selenized Cu2ZnSnS4 surface: Possible route to overcoming voc-deficit of kesterite solar cells
Li-based selenized Cu2ZnSnS4 surface: Possible route to overcoming voc-deficit of kesterite solar cells
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DOI：
10.1063/5.0055429
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发表时间：
2021-06
影响因子：
4
通讯作者：
K. Zhao;Huiwen Xiang;Yingru Cui;Rui Zhu;Chengyan Liu;Yu Jia
中科院分区：
文献类型：
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作者：
K. Zhao;Huiwen Xiang;Yingru Cui;Rui Zhu;Chengyan Liu;Yu Jia
Usually, open-circuit voltage ( V oc ) of thin film solar cells significantly depends on the band bending at the front interface of an absorber/buffer. The failed band bending at a Cu2ZnSnS4/CdS (CZTS/CdS) interface severely hinders the increase in V oc due to the excessively high concentration of holes at the CZTS side. Alleviating the strong p-type or converting it to weak n-type at the CZTS surface is a credible idea to overcome the V oc − deficit. First-principles calculations show that the Li-based selenized CZTS surface presents the desired property with excellent advantages: (i) The greatly improved defects and band offset suppress carrier nonradiative recombination and facilitate electrons transmission, respectively. (ii) Its intrinsic weak n-type characteristic effectively promotes the large band bending at the interface.
