Theory of electron-plasmon coupling in semiconductors
Theory of electron-plasmon coupling in semiconductors
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DOI：
10.1103/physrevb.94.115208
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发表时间：
2016-09-27
影响因子：
3.7
通讯作者：
Giustino, Feliciano
中科院分区：
文献类型：
--
作者：
Caruso, Fabio;Giustino, Feliciano
操纵等离子体激元的能力正在推动电子学、光学、传感、能源和医学的新发展。尽管在这个方向上的实验研究的巨大势头，一个预测的量子力学框架描述电子等离子体相互作用在真实的材料仍然是失踪。在这里，从多体绿色函数方法出发，我们发展了一种从头计算方法来研究固体中的电子-等离子体耦合。作为这种方法的第一个演示，我们表明，电子等离子体激元散射是掺杂硅中的热载流子的冷却的主要机制，它是解释在高掺杂测量的电子迁移率的关键，它导致了量子零点重整化的带隙与实验一致。
The ability to manipulate plasmons is driving new developments in electronics, optics, sensing, energy, and medicine. Despite the massive momentum of experimental research in this direction, a predictive quantum-mechanical framework for describing electron-plasmon interactions in real materials is still missing. Here, starting from a many-body Green's function approach, we develop an ab initio approach for investigating electron-plasmon coupling in solids. As a first demonstration of this methodology, we show that electron-plasmon scattering is the primary mechanism for the cooling of hot carriers in doped silicon, it is key to explaining measured electron mobilities at high doping, and it leads to a quantum zero-point renormalization of the band gap in agreement with experiment.