Band tailing effects in neon-implanted GaN
Band tailing effects in neon-implanted GaN
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DOI：
10.1063/1.3269715
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发表时间：
2009-12
影响因子：
3.2
通讯作者：
A. Majid;Akbar Ali
中科院分区：
文献类型：
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作者：
A. Majid;Akbar Ali
高分辨率的X射线衍射和光学透射测量进行了连续退火在800 ° C和1000 °C下，以研究注入的效果的金属有机化学气相沉积生长GaN薄膜。在注入后记录的高分辨率X射线衍射图中观察到GaN主峰的低角侧的几个副峰。这些峰归因于样品的注入部分中的晶格的膨胀。光学透射率的测量结果表明，随着注入剂量的增加，带尾和光学带隙红移的注入样品的一致增加。带拖尾被认为是由于在注入样品中产生点缺陷引起的晶格膨胀。植入样品的光学和结构特性之间的相关性进行了研究，使用从剂量依赖性的变化，在晶面间晶格间距，光学带隙，和Urbach能量测量的结果。
High resolution x-ray diffraction and optical transmission measurements were performed on neon-implanted metal-organic chemical-vapor deposition-grown GaN thin films, successively annealed at 800 and 1000 °C, to study the effect of implantation. Several subsidiary peaks on lower angle side of the main GaN peak were observed in high resolution x-ray diffraction pattern recorded after implantation. The peaks are ascribed to the expansion of the lattice in the implanted part of the samples. Optical transmission measurements revealed a consistent increase in band tailing and redshift in optical band gap of the implanted samples with increasing dose. The band tailing is proposed to be due to expansion of the lattice caused by the production of point defects in the implanted samples. A correlation between optical and structural properties of the implanted samples was studied using results obtained from dose-dependent variation in interplanar lattice spacing, optical band gap, and Urbach energy measurements.