Low‐resistive and transparent AZO films prepared by PLD in magnetic field
Low‐resistive and transparent AZO films prepared by PLD in magnetic field
复制标题
磁场中PLD制备低阻透明AZO薄膜
DOI：
10.1002/eej.20026
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发表时间：
2003
影响因子：
0.4
通讯作者：
M. Okuda
中科院分区：
文献类型：
--
作者：
H. Agura;H. Okinaka;Shigeyasu Hoki;T. Aoki;A. Suzuki;T. Matsushita;M. Okuda
用ArF准分子激光器(λ=193 nm，15 mJ，10 Hz，0.75J/cm~2)，用AZO(1wt%)和AZO(2wt%)组成的分束靶，在玻璃衬底上沉积了Al_2O_3掺杂的氧化锌薄膜。通过施加垂直于羽流的磁场，在衬底温度为2 30°C、厚度约2 79 nm(1.8wt%)的真空条件下，当靶基距离为2 5 mm时，获得了最低的电阻率为8.5 4×10−5Ω·cm，在可见光范围内的平均透过率超过91%。从横截面观察和X射线衍射谱可以看出，低电阻率(54×10−5Ω·cm)的原因是由于施加磁场抑制了衬底和薄膜界面附近的晶体生长无序，c轴取向优先，导致迁移率增加。《威利期刊报》，151(2)：40-45,2005；在线发表在《威利国际科学》(www.intercience.wiley.com)上。DOI 10.1002/eej.20026
Al2O3‐doped ZnO (AZO) thin films have been deposited onto glass substrates using a split target consisting of AZO (1 wt%) and AZO (2 wt%) by pulsed laser deposition with an ArF excimer laser (λ = 193 nm, 15 mJ, 10 Hz, 0.75 J/cm2). By applying a magnetic field perpendicular to the plume, the lowest resistivity of 8.54 × 10−5Ω·cm and an average transmittance exceeding 91% over the visible range were obtained at a target‐to‐substrate distance of 25 mm for approximately 279‐nm‐thick AZO film (1.8 wt%) grown at a substrate temperature of 230 °C in vacuum. From cross‐sectional TEM observations and the XRD spectrum, a reason why the low resistivity (54 × 10−5Ω·cm) was reproducibly obtained was considered to be due to the fact that a disorder of crystal growth originating in the vicinity of the interface between the substrate and the film was suppressed by application of the magnetic field and the c‐axis orientation took preference, giving rise to the increase of mobility. © 2005 Wiley Periodicals, Inc. Electr Eng Jpn, 151(2): 40–45, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.20026