Critical Bending Radius and Electrical Behaviors of Organic Field Effect Transistors under Elastoplastic Bending Strain
Critical Bending Radius and Electrical Behaviors of Organic Field Effect Transistors under Elastoplastic Bending Strain
复制标题
弹塑性弯曲应变下有机场效应晶体管的临界弯曲半径和电学行为
作者：
M.Kanari;M.Kunimoto;T.Wakamatsu;and I.Ihara
