Nanosecond switching in GeSe phase change memory films by atomic force microscopy
Nanosecond switching in GeSe phase change memory films by atomic force microscopy
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DOI：
10.1063/1.4863495
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发表时间：
2014-02
影响因子：
4
通讯作者：
J. Bosse;I. Grishin;Y. Choi;B. Cheong;Suyoun Lee;O. Kolosov;B. Huey
中科院分区：
文献类型：
--
作者：
J. Bosse;I. Grishin;Y. Choi;B. Cheong;Suyoun Lee;O. Kolosov;B. Huey
用导电原子力显微镜(AFM)研究了非晶态GeSE薄膜的纳秒阈值开关。切换比特在导电性上表现出2-3个数量级的变化，如在基于相变的存储器件中所示。通过纳米级的AFM探针，实现了这种结晶，脉冲持续时间低至15 ns，是基于扫描探针的方法中报道的最快的。切换比特的电导AFM成像进一步揭示了切换体积、脉冲幅度和脉冲持续时间之间的相关性。还可以直接检测薄膜异质对开关的影响，这对于优化器件性能是非常重要的。
Nanosecond scale threshold switching is investigated with conducting atomic force microscopy (AFM) for an amorphous GeSe film. Switched bits exhibit 2–3 orders of magnitude variations in conductivity, as demonstrated in phase change based memory devices. Through the nm-scale AFM probe, this crystallization was achieved with pulse durations of as low as 15 ns, the fastest reported with scanning probe based methods. Conductance AFM imaging of the switched bits further reveals correlations between the switched volume, pulse amplitude, and pulse duration. The influence of film heterogeneities on switching is also directly detected, which is of tremendous importance for optimal device performance.