Exciton dynamics in current-injected single quantum dot at 1.55 μm
Exciton dynamics in current-injected single quantum dot at 1.55 μm
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DOI：
10.1063/1.2909556
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发表时间：
2008-04-21
影响因子：
4
通讯作者：
Yokoyama, Naoki
中科院分区：
文献类型：
--
作者：
Miyazawa, Toshiyuki;Nakaoka, Toshihiro;Yokoyama, Naoki
我们研究了电流注入的单InAs量子点（QD）中的激子动力学，该量子点发射1.55 μ m光子。利用单量子点的单条电致发光线观察到光子的反聚束行为。通过时间分辨测量确定该谱线的辐射寿命为1.59 ns。单激子复合时间与八带kp模型计算的寿命一致。我们研究了通过改变两个电脉冲之间的延迟时间的设备的高驱动速率操作。这些结果表明，我们的设备有可能实现电信波段亚千兆赫兹单光子发射的电脉冲。(c)2008年美国物理学会。
We investigate the exciton dynamics in a current-injected single InAs quantum dot (QD) which emits 1.55 mu m photons. Photon antibunching behavior is observed using a single electroluminescence line of a single QD. The radiative lifetime of this line determined by time-resolved measurement is 1.59 ns. The single exciton recombination time agrees with the lifetime calculated with an eight-band kp model. We examine a high drive rate operation of the device by changing the delay time between two electrical pulses. These results demonstrate that our device has the potential to achieve telecommunication band subgigahertz single-photon emission with electrical pulses. (c) 2008 American Institute of Physics.