Magnetic characterization of CoFeB∕MgO and CoFe∕MgO interfaces
Magnetic characterization of CoFeB∕MgO and CoFe∕MgO interfaces
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CoFeB∕MgO 和 CoFe∕MgO 界面的磁性表征
DOI：
10.1063/1.2709619
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发表时间：
2007
影响因子：
4
通讯作者：
D. Djayaprawira
中科院分区：
文献类型：
--
作者：
E. Negusse;A. Lussier;J. Dvorak;Y. Idzerda;S. Shinde;Y. Nagamine;S. Furukawa;K. Tsunekawa;D. Djayaprawira
使用CoFeB铁磁电极代替CoFe已被证明显著增加基于MgO的磁性隧道结（MTJ）的隧穿磁阻（TMR）。通过使用软X射线散射技术，我们表明，位于CoFe-MgO界面的磁矩的行为是从其余的CoFe膜的显着不同，而CoFeB-MgO界面的磁矩的磁响应是相干的与膜的散装。我们的研究结果支持这样的观点，即在MgO基MTJ与CoFeB电极中观察到的高TMR值是由于整个CoFeB电极的均匀磁响应，包括MgO界面矩。
The use of CoFeB ferromagnetic electrodes in place of CoFe has been shown to significantly increase the tunneling magnetoresistance (TMR) of MgO based magnetic tunnel junctions (MTJs). By using soft x-ray scattering techniques, we show that the behavior of the magnetic moments located at the CoFe–MgO interface are drastically different from the rest of the CoFe film, whereas the magnetic response of the CoFeB–MgO interfacial moments is coherent with the film’s bulk. Our results support the view that the high TMR values observed in MgO based MTJs with CoFeB electrodes are due to the uniform magnetic response of the entire CoFeB electrode including the MgO interfacial moments.