New n-Type Thermoelectric Oxide, Cd3TeO6
New n-Type Thermoelectric Oxide, Cd3TeO6
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新型 n 型热电氧化物 Cd3TeO6
DOI：
10.1143/jjap.41.l780
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发表时间：
2002
影响因子：
1.5
通讯作者：
M. Itoh
中科院分区：
文献类型：
--
作者：
Y. Shan;K. Sasaki;Kazuhiro Sudo;H. Imoto;M. Itoh
通过引入氧空位和In原子取代Cd两种方法对1：1有序钙钛矿结构的Cd 3 TeO 6进行了电子掺杂。这两种方法都是将多晶样品转变为金属导体，而第二种方法则得到具有金属导电性的单晶。单晶样品的电阻率和热电势分别为0.6 mΩ·cm和-50 µV·K-1，功率因数为4×10-4 W·K-2·m-1，是非过渡金属氧化物中最高的。
Electron doping into Cd3TeO6 with a 1:1 ordered perovskite-type structure was carried out by two methods: the introduction of oxygen vacancies, and the atomic substitution of In for Cd. Both methods turned polycrystalline samples into metallic conductors while single crystals with metallic conductivity were obtained by the second method. The resistivity and thermoelectric power of the single-crystal indium-substituted sample were 0.6 mΩ·cm and -50 µV·K-1, respectively, giving a power factor of 4×10-4 W·K-2·m-1, which is the highest among nontransition metal oxides.