Specular Surface Morphology of 4H–SiC Epilayers Grown on (112̄0) Face
Specular Surface Morphology of 4H–SiC Epilayers Grown on (112̄0) Face
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(112̄0) 面上生长的 4H–SiC 外延层的镜面表面形貌
DOI：
10.1143/jjap.38.l1375
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发表时间：
1999
影响因子：
1.5
通讯作者：
H. Matsunami
中科院分区：
文献类型：
--
作者：
Z. Chen;T. Kimoto;H. Matsunami
研究了在垂直于（0001）面的（11 ~ 00）面和（112 ~ 0）面的4 H-SiC衬底上外延生长4 H-SiC。这些外延层在表面形态结构上不同于在常规（0001）面上生长的外延层。在（112 <$0）面上可以获得非常光滑的表面，没有宏观台阶和三角形缺陷，这些缺陷通常在离轴（0001）面上生长的外延层中观察到。（112 - 110）外延层的表面缺陷面积比（0001）外延层低一个数量级（0.010%）。相比之下，大的拉长的表面缺陷，观察到（11 × 00）上生长的外延层，可能是由于堆垛层错的形成。吸附原子在（11 <$00）面和（112 <$00）面上的不同排列可能是导致（11 <$00）面上层错形成的原因。
4H–SiC epitaxial growth on 4H–SiC substrates with (11̄00) and (112̄0) faces, which are perpendicular to the (0001) face, has been investigated. These epilayers are different in surface morphological structure from those grown on the conventional (0001) face. An extremely smooth surface can be obtained on (112̄0) without macrosteps and triangular defects, which are often observed for epilayers grown on the off-axis (0001) face. The (112̄0) epilayers exhibit one-order-of-magnitude lower surface defect area (0.010%) than the (0001) epilayers. In contrast, large elongated surface defects are observed for epilayers grown on (11̄00), probably due to the formation of stacking faults. The different arrangement of adatoms on the (11̄00) and (112̄0) faces may be responsible for the stacking fault formation on the (11̄00) face.