Scaling of multiexciton lifetimes in semiconductor nanocrystals
Scaling of multiexciton lifetimes in semiconductor nanocrystals
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DOI：
10.1103/physrevb.77.195324
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发表时间：
2008-05-01
影响因子：
3.7
通讯作者：
Rupasov, V. I.
中科院分区：
文献类型：
--
作者：
Klimov, V. I.;McGuire, J. A.;Rupasov, V. I.
俄歇复合导致的超快多激子衰变是半导体纳米晶体在激光和载流子倍增太阳能电池中应用的主要障碍。俄歇复合的一个重要的未被探索的方面是多激子寿命随每个NC的激子数目的变化。为了解决这个问题，我们分析了PbSe和CdSe NCS中的多激子动力学。我们观察到这两个系统在多激子寿命的标度上表现出明显的不同，这可以用最低能量量子化状态简并的显著差异导致高阶多激子对称性的不同来解释。
Ultrafast multiexciton decay via Auger recombination is a major impediment for prospective applications of semiconductor nanocrystals (NCs) in lasing and solar cells enabled by carrier multiplication. One important unexplored aspect of Auger recombination is the scaling of multiexciton lifetimes with the number of excitons per NC. To address this question, we analyze multiexciton dynamics in PbSe and CdSe NCs. We observe that these two systems show a distinct difference in scaling of multiexciton lifetimes, which can be explained in terms of a difference in symmetries of high-order multiexcitons resulting from significant disparity in degeneracies of the lowest-energy quantized states.