CIGS Thin Films for Cd-Free Solar Cells by One-Step Sputtering Process
CIGS Thin Films for Cd-Free Solar Cells by One-Step Sputtering Process
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DOI：
10.1007/s11664-014-3108-3
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发表时间：
2014-04
影响因子：
2.1
通讯作者：
Jun-Xiang Xiang-Jun-Xiang-Xiang-94443515;Xing Huang;G. Lin;Jiang Tang;C. Ju;X. Miao
中科院分区：
文献类型：
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作者：
Jun-Xiang Xiang-Jun-Xiang-Xiang-94443515;Xing Huang;G. Lin;Jiang Tang;C. Ju;X. Miao
使用四元 CIGS 靶材通过一步射频 (RF) 磁控溅射工艺沉积 Cu(In1−xGax)Se2(CIGS) 薄膜。研究了基底温度对CIGS薄膜的组成、结构和光学性能的影响。所有CIGS薄膜都呈现出沿(112)方向择优取向的黄铜矿结构。与523和573 K沉积的薄膜相比，623 K沉积的CIGS薄膜在薄膜结晶度和表面形态方面表现出显着改善。为了简化太阳能电池的制造过程并避免使用有毒元素Cd，还研究了通过射频溅射制备的ZnS薄膜的性能。结果表明，溅射的ZnS薄膜与溅射的CIGS薄膜表现出良好的晶格匹配，并且光吸收损耗显着降低。最后，制备了结构为SLG/Mo/CIGS/ZnS/AZO/Al栅格的全溅射无镉CIGS基异质结太阳能电池，无需进行后硒化处理。此外，结果证明了使用全溅射工艺制造无镉 CIGS 太阳能电池的可行性。
Cu(In1−xGax)Se2(CIGS) thin films were deposited by a one-step radio frequency (RF) magnetron sputtering process using a quaternary CIGS target. The influence of substrate temperature on the composition, structure, and optical properties of the CIGS films was investigated. All the CIGS films exhibited the chalcopyrite structure with a preferential orientation along the (112) direction. The CIGS film deposited at 623 K showed significant improvement in film crystallinity and surface morphology compared to films deposited at 523 and 573 K. To simplify the manufacturing procedure of solar cells and avoid the use of the toxic element Cd, the properties of ZnS films prepared by RF sputtering were also investigated. The results revealed that the sputtered ZnS film exhibits good lattice matching with the sputtered CIGS film with significantly lower optical absorption loss. Finally, all-sputtered Cd-free CIGS-based heterojunction solar cells with the structure SLG/Mo/CIGS/ZnS/AZO/Al grids were fabricated without post-selenization. Furthermore, the results demonstrated the feasibility of using a full sputtering process for the fabrication of Cd-free CIGS-based solar cell.