Electro-Luminescence from Ultra-Thin Silicon
Electro-Luminescence from Ultra-Thin Silicon
复制标题
超薄硅电致发光
DOI：
10.1143/jjap.45.l679
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发表时间：
2006
影响因子：
1.5
通讯作者：
T. Onai
中科院分区：
文献类型：
--
作者：
S. Saito;D. Hisamoto;H. Shimizu;H. Hamamura;R. Tsuchiya;Y. Matsui;T. Mine;T. Arai;N. Sugii;K. Torii;S. Kimura;T. Onai
在绝缘体上硅(SOI)衬底上形成(100)面的超薄单晶硅，由于量子力学的限制效应，成为准直接带隙半导体。该器件是平面结构中的简单pn二极管。通过横向载流子注入到二维量子阱中，观察到了电致发光。
Ultra-thin single crystal silicon with the (100) surface formed by the local-oxidation-of-silicon (LOCOS) on a silicon-on-insulator (SOI) substrate becomes a quasi-direct band-gap semiconductor due to the quantum mechanical confinement effect. The device is a simple pn diode in a planar structure. Electro-luminescence (EL) has been observed by the lateral carrier injections into the two-dimensional quantum well.