Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate
Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate
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DOI：
10.1016/j.mee.2005.04.033
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发表时间：
2005-06
影响因子：
2.3
通讯作者：
Chao-Ching Cheng;C. Chien;Ching-Wei Chen;S. Hsu;Ming-Yi Yang;Chien-Chao Huang;Fu-Liang Yang;Chun-Yen Chang
中科院分区：
文献类型：
--
作者：
Chao-Ching Cheng;C. Chien;Ching-Wei Chen;S. Hsu;Ming-Yi Yang;Chien-Chao Huang;Fu-Liang Yang;Chun-Yen Chang
