p-Type Doping of Graphene with Cationic Nitrogen
p-Type Doping of Graphene with Cationic Nitrogen
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DOI：
10.1021/acsanm.8b02237
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发表时间：
2019-03-01
影响因子：
5.9
通讯作者：
Saito, Nagahiro
中科院分区：
文献类型：
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作者：
Chae, Sangwoo;Panomsuwan, Gasidit;Saito, Nagahiro
通过氮掺杂来调整石墨烯的电学性质目前在先进应用的广泛领域中具有重要意义。石墨烯中氮原子的成键构型在控制其电学、化学和光学性质方面起着至关重要的作用。在这里，我们首次报道了一个简单的自下而上的合成一个新的阳离子氮掺杂石墨烯（CNG）的溶液等离子体（SP）。使用离子液体和有机溶剂的混合物作为起始前体。CNG表现出正交结构，可能是由于六方石墨烯晶格中存在阳离子氮。发现氮掺杂含量高达13.4原子%。电性能测试表明，CNG具有良好的p型半导体特性，具有优良的上级导电性和载流子浓度。CNG的这种独特的电特性主要归因于具有保留的平面结构的阳离子氮的存在。
Tailoring electrical properties of graphene by nitrogen doping is currently of great significance in a broad area of advanced applications. Bonding configuration of nitrogen atoms in graphene plays a vital role in controlling its electrical, chemical, and optical properties. Here, we report for the first time a simple bottom-up synthesis of a novel cationic nitrogen doped graphene (CNG) by a solution plasma (SP). A mixture of ionic liquid and organic solvent was used as starting precursor. CNG exhibited an orthorhombic structure possibly due to the presence cationic nitrogen in hexagonal graphene lattice. Nitrogen doping content was found to be as high as 13.4 atom %. Electrical characterization demonstrated that the CNG exhibited a p-type semiconducting behavior with superior electrical conductivity and carrier concentration. Such unique electrical characteristics of CNG are mainly attributed to the presence of cationic nitrogen with preserved planar structure.