One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
复制标题
GaAs-AlAs量子阱结构中的一种原子层异质界面涨落及其在分子束外延中插入平滑周期的抑制
DOI：
10.1143/jjap.24.l417
复制
发表时间：
1985
影响因子：
1.5
通讯作者：
J. Yoshino
中科院分区：
文献类型：
--
作者：
H. Sakaki;Masaaki Tanaka;J. Yoshino
研究了GaAs-AlAs量子威尔斯阱的光致发光谱，以评价分子束外延制备的异质界面的平坦性。我们研究的相关性的界面粗糙度与测量的强度振荡的反射高能电子衍射（RHEED）在生长过程中。发现晶体表面在10个或更多原子层的生长之后变粗糙。在界面形成之前中断10-100秒的生长对于实现原子级平坦的界面是有效的，即使当量子阱宽度减小到40 μ m时，也导致在77 K下线宽<30 μ m的尖锐的光致发光。
Photoluminescence spectra of GaAs-AlAs quantum wells are studied to evaluate the flatness of heterointerfaces prepared by molecular beam epitaxy. We examine the correlation of the interface roughness with the measured intensity oscillations of reflective high energy electron diffraction (RHEED) during the growth. The crystal surface is found to roughen after the growth of 10 or more atomic layers. The growth interruption of 10–100 seconds prior to the interface formation is effective in achieving an atomically flat interface, leading to sharp photoluminescence with the linewidth <30 Å at 77 K even when the quantum well width is reduced to 40 Å.