Memory materials and devices: From concept to application
Memory materials and devices: From concept to application
复制标题
DOI：
10.1002/inf2.12077
复制
发表时间：
2020-03
期刊：
影响因子：
--
通讯作者：
Zhenhan Zhang;Zongwei Wang;Tuo Shi;C. Bi;F. Rao;Yimao Cai;Qi Liu;Huaqiang Wu;P. Zhou
中科院分区：
文献类型：
--
作者：
Zhenhan Zhang;Zongwei Wang;Tuo Shi;C. Bi;F. Rao;Yimao Cai;Qi Liu;Huaqiang Wu;P. Zhou
存储单元一直是信息技术的重要元素。随着大数据和云计算等新兴技术的出现，数据存储的规模和复杂性达到了前所未有的高峰，对存储技术的要求也越来越高。众所周知，更好的数据存储主要通过小型化来实现。然而，随着存储器件尺寸的减小，诸如漏极栅致漏电等一系列问题极大地阻碍了存储单元的性能。为了满足信息技术日益增长的需求，迫切需要新型高性能存储器。幸运的是，新兴的存储器技术有望提高存储器性能并推动信息革命。本文将重点介绍几种新兴存储器技术的进展，包括二维材料存储器、电阻随机存取存储器（RRAM）、磁性随机存取存储器（MRAM）和相变随机存取存储器（PCRAM）。这些不同的存储器技术的优点，机制和应用将在这次审查中进行讨论。
Memory cells have always been an important element of information technology. With emerging technologies like big data and cloud computing, the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory technology. As is well known, better data storage is mostly achieved by miniaturization. However, as the size of the memory device is reduced, a series of problems, such as drain gate‐induced leakage, greatly hinder the performance of memory units. To meet the increasing demands of information technology, novel and high‐performance memory is urgently needed. Fortunately, emerging memory technologies are expected to improve memory performance and drive the information revolution. This review will focus on the progress of several emerging memory technologies, including two‐dimensional material‐based memories, resistance random access memory (RRAM), magnetic random access memory (MRAM), and phase‐change random access memory (PCRAM). Advantages, mechanisms, and applications of these diverse memory technologies will be discussed in this review.