Electron paramagnetic resonance of erbium doped silicon
Electron paramagnetic resonance of erbium doped silicon
复制标题
掺铒硅的电子顺磁共振
DOI：
10.1063/1.117127
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发表时间：
1996
影响因子：
4
通讯作者：
S. Coffa
中科院分区：
文献类型：
--
作者：
J. D. Carey;J. Donegan;R. Barklie;F. Priolo;G. Franzò;S. Coffa
对注入10^15Er/cm2的浮区硅样品进行了电子顺磁共振测量。其中一个样品与氧气共注入，得到了10^20 O/cm~3和10^19 Er/cm~3的杂质浓度。在这个共注入的样品中，观察到了尖锐的谱线，这些谱线被鉴定为来自具有单斜C1h对称性的g张量的单个自旋1/2 Er3+中心。主要的g值和倾角分别为g1=0.80，g2=5.45，g3=12.60，τ=2.6°。在没有O的情况下，观察不到锐利的线条。两种样品均未检测到Er3+立方中心。讨论了该中心的可能结构
Electron paramagnetic resonance measurements have been made on samples of float zone silicon, implanted with 10^15 Er/cm2. One sample was coimplanted with oxygen to give an impurity concentration of 10^20 O/cm3 and 10^19 Er/cm3. In this coimplanted sample, sharp lines are observed which are identified as arising from a single spin 1/2 Er3+ center having a g tensor exhibiting monoclinic C1h symmetry. The principal g values and tilt angle are g1=0.80, g2=5.45, g3=12.60, and τ=2.6°. In the absence of O, the sharp lines are not observed. No Er3+ cubic centers were detected in either sample. Possible structures for the center are discussed