Hafnium Oxide Based CMOS Compatible Ferroelectric Materials
Hafnium Oxide Based CMOS Compatible Ferroelectric Materials
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DOI：
10.1149/2.010304jss
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发表时间：
2013-01-01
影响因子：
2.2
通讯作者：
Mikolajick, T.
中科院分区：
文献类型：
--
作者：
Schroeder, U.;Mueller, S.;Mikolajick, T.
将报道基于氧化铪介质的电容器的铁电行为。当将7 ~ 30nm厚度的薄膜集成到tin基金属-绝缘体-金属电容器中时，发现其呈现铁电极化-电压滞回。观察到残余极化高达25 μ C/cm(2)和约1 MV/cm的高矫顽力场。对原子半径从110 pm （Si）到188 pm （Gd）的不同掺杂剂掺杂HfO2进行了评价，并通过极化电压滞后、小信号电容电压特性验证了所有情况下的铁电行为，并通过压电测量验证了Si作为掺杂剂的铁电行为。在电容和晶体管结构上对极化保持和持久进行了表征。(C) 2013中国电化学会。版权所有。
The ferroelectric behavior of capacitors based on hafnium oxide dielectrics will be reported. Thin films of 7-30 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based metal-insulator-metal capacitors. A remanent polarization up to 25 mu C/cm(2) and a high coercive field of about 1 MV/cm was observed. Doping of HfO2 by different dopants with an atomic radius ranging from 110 pm (Si) to 188 pm (Gd) was evaluated and in all cases ferroelectric behavior was verified by polarization-voltage hysteresis, small signal capacitance-voltage characteristics, and for Si as a dopant also by piezoelectric measurements. Polarization retention and endurance was characterized on capacitor and transistor structures. (C) 2013 The Electrochemical Society. All rights reserved.