Promotion of [001]-oriented L10-FePt by rapid thermal annealing with light absorption layer
Promotion of [001]-oriented L10-FePt by rapid thermal annealing with light absorption layer
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DOI：
10.1063/1.4772072
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发表时间：
2012-12
影响因子：
4
通讯作者：
Liang-Wei Wang;W. Shih;Yun-chung Wu;C. Lai
中科院分区：
文献类型：
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作者：
Liang-Wei Wang;W. Shih;Yun-chung Wu;C. Lai
Highly [001]-oriented L10-FePt grown on SiO2‖Si is achieved by using rapid thermal annealing (RTA) at 400 °C. Due to the dramatic divergence of light absorption ability between Si and FePt films, Si behaves as the light absorption layer to absorb more light emitted from RTA system, which gives rise to larger thermal expansion on Si and induces in-plane tensile stress on FePt films. By raising heating rate during RTA, the transient light intensity is increased; therefore, higher in-plane tensile stress on FePt films is generated, which effectively suppresses the opening-up of in-plane hysteresis loops.
