IMPURITY-VACANCY COMPLEXES IN ELECTRON-IRRADIATED SILICON
IMPURITY-VACANCY COMPLEXES IN ELECTRON-IRRADIATED SILICON
复制标题
电子辐照硅中的杂质空位复合物
DOI：
10.1103/physrevb.58.1331
复制
发表时间：
1998
影响因子：
3.7
通讯作者：
S. Dannefaer
中科院分区：
文献类型：
--
作者：
V. Avalos;S. Dannefaer
A comprehensive study of $\ensuremath{\simeq}2.5--10\ensuremath{-}\mathrm{MeV}$ electron-irradiated Czochralski Si has been conducted using positron lifetime and Doppler broadening spectroscopies. Eight samples, ranging from heavily doped $n$ type to heavily doped $p$ type, were irradiated simultaneously at room temperature to facilitate quantitative comparisons between the samples. The influence from the oxygen impurity was also investigated by comparison with oxygen-free Si. For lightly doped materials (dopant concentration less than $5\ifmmode\times\else\texttimes\fi{}{10}^{16}/{\mathrm{cm}}^{3})$ the irradiation damage is dominated by free, and negatively charged divacancies for the dose employed in this work $(1.2\ifmmode\times\else\texttimes\fi{}{10}^{18}{e}^{\ensuremath{-}}/{\mathrm{cm}}^{2}).$ For the heavily doped materials (dopant concentrations larger than $5\ifmmode\times\else\texttimes\fi{}{10}^{17}/{\mathrm{cm}}^{3})$ vacancy-dopant complexes dominate, some of which involve divacancies, and in these samples very high introduction rates $(1--4{\mathrm{cm}}^{\mathrm{\ensuremath{-}}1})$ are estimated. In heavily B-doped materials evidence is found for thermally activated trapping by boron divacancy complexes. Association of divacancies with P, Sb, and B dopants was found to modify significantly the Doppler $S$ parameter relative to the value for free divacancies.
A comprehensive study of $\ensuremath{\simeq}2.5--10\ensuremath{-}\mathrm{MeV}$ electron-irradiated Czochralski Si has been conducted using positron lifetime and Doppler broadening spectroscopies. Eight samples, ranging from heavily doped $n$ type to heavily doped $p$ type, were irradiated simultaneously at room temperature to facilitate quantitative comparisons between the samples. The influence from the oxygen impurity was also investigated by comparison with oxygen-free Si. For lightly doped materials (dopant concentration less than $5\ifmmode\times\else\texttimes\fi{}{10}^{16}/{\mathrm{cm}}^{3})$ the irradiation damage is dominated by free, and negatively charged divacancies for the dose employed in this work $(1.2\ifmmode\times\else\texttimes\fi{}{10}^{18}{e}^{\ensuremath{-}}/{\mathrm{cm}}^{2}).$ For the heavily doped materials (dopant concentrations larger than $5\ifmmode\times\else\texttimes\fi{}{10}^{17}/{\mathrm{cm}}^{3})$ vacancy-dopant complexes dominate, some of which involve divacancies, and in these samples very high introduction rates $(1--4{\mathrm{cm}}^{\mathrm{\ensuremath{-}}1})$ are estimated. In heavily B-doped materials evidence is found for thermally activated trapping by boron divacancy complexes. Association of divacancies with P, Sb, and B dopants was found to modify significantly the Doppler $S$ parameter relative to the value for free divacancies.