Magnetoresistance in a doped Mott-Hubbard system: R TiO3
Magnetoresistance in a doped Mott-Hubbard system: R TiO3
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DOI：
10.1103/physrevb.91.024411
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发表时间：
2015-01
影响因子：
3.7
通讯作者：
T. Ito;Y. Shimada;T. Katsufuji
中科院分区：
文献类型：
--
作者：
T. Ito;Y. Shimada;T. Katsufuji
我们研究了（和Ce）的磁电阻与offstoichiometric作为一个掺杂的Mott-Hubbard系统，发现正的磁电阻成正比的绝对值的磁场中的反铁磁相的绝缘和金属样品。这一结果表明，不仅与掺杂出现的相干态，负责金属导电，而且非相干态的Mott-Hubbard绝缘体的自旋配置的影响。
We studied the magnetoresistance of(and Ce) with offstoichiometry as a doped Mott-Hubbard system and found positive magnetoresistance proportional to the absolute value of the magnetic field in the antiferromagnetic phase of both insulating and metallic samples. This result indicates that not only the coherent state that appears with doping and is responsible for the metallic conduction, but also the incoherent state of the Mott-Hubbard insulator is affected by the spin configuration.