MBE growth and design of II-VI heterostructures for epitaxial lift-off
MBE growth and design of II-VI heterostructures for epitaxial lift-off
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用于外延剥离的 II-VI 异质结构的 MBE 生长和设计
DOI：
10.1002/pssa.201100584
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Davidson I
中科院分区：
文献类型：
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作者：
Davidson I
外延剥离（ELO）是一种生长后工艺，允许半导体结构的有源部分从其生长衬底转移到新衬底。这是一种成熟的III-V族半导体技术，之前已经在GaAs上使用亚稳态MgS牺牲层生长ZnSe基合金时得到了证明，利用了MgS和ZnSe的蚀刻速率的巨大差异。我们在这里报告了该工艺首次成功扩展到使用MgSe牺牲层在InP上生长II-VI族层。通过使用正确的蚀刻条件，已经发现MgSe作为牺牲层有效地工作。通过光学显微镜和光致发光（PL）测量，可以将5 × 5 mm 2的方形材料提升并沉积在玻璃基板上，而不会导致结构或光学性能的任何劣化。
Epitaxial lift‐off (ELO) is a post‐growth process that allows the active part of a semiconductor structure to be transferred from its growth substrate to a new one. This is a well established technique for III–V semiconductors, and has previously been demonstrated for ZnSe‐based alloys grown on GaAs using a metastable MgS sacrificial layer, taking advantage of the huge difference in etch rates of MgS and ZnSe.We report here the first successful extension of this process to II–VI layers grown on InP by using a MgSe sacrificial layer. By using the correct etching conditions, MgSe has been found to work effectively as a sacrificial layer. 5 × 5 mm2square pieces of material can be lifted and deposited on glass substrates without any deterioration in the structural or optical properties; as confirmed by optical microscopy and photoluminescence (PL) measurements.