Fabrication and characterization of Au Island single-electron transistors with CrOx step edge junctions
Fabrication and characterization of Au Island single-electron transistors with CrOx step edge junctions
复制标题
具有 CrOx 阶梯边缘结的金岛单电子晶体管的制造和表征
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
G. Snider
中科院分区：
文献类型：
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作者：
Xiangning Luo;A. Orlov;G. Snider
报道了用Au岛和CrOx阻性微带制作的单电子晶体管。为了研究这些器械中库仑阻塞的发生率，对三种类型的器械设计进行了测试。典型的单电子行为，电导调制的栅极，观察到的设备，有小的重叠面积与金岛。讨论了CrOx电阻的电子输运机理，并对实验结果提出了在金属微带边缘形成台阶边缘结的假设。
Single-electron transistors fabricated using Au islands and CrOx resistive microstrips are reported. To investigate the occurrence of Coulomb blockade in these devices, three types of device designs have been tested. Typical single-electron behavior, conductance modulation by the gate, is observed in the devices which had small overlap area with the gold island. Electron transport mechanism of CrOx resistors is discussed and a hypothesis of the formation of step edge junctions at the edges of granular metal microstrips is given as the explanation for the experimental results.