CMOS low noise amplifier for microstrip readout Design and results
CMOS low noise amplifier for microstrip readout Design and results
复制标题
用于微带读出的 CMOS 低噪声放大器设计和结果
DOI：
10.1016/0168-9002(91)90018-l
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发表时间：
1991
影响因子：
1.4
通讯作者：
K. Yoshioka
中科院分区：
文献类型：
--
作者：
E. Nygård;P. Aspell;P. Jarron;P. Weilhammer;K. Yoshioka
采用 1.5 μm CMOS 技术设计并构建了低噪声前置放大器和整形器芯片，用于 Si 微带探测器的读出。该芯片针对噪声进行了优化。给出了原型芯片性能的测量结果。已实现 ENC = 160 e−+ 12 e−/pF 的噪声性能。
A low noise preamplifier and shaper chip has been designed and built in 1.5 μm CMOS technology to be used for readout of Si microstrip detectors. The chip is optimized with respect to noise. Measurements on the performance of the prototype chip are presented. A noise performance of ENC = 160 e−+ 12 e−/pF has been achieved.