Preparation of (100) CeO2 and (110) YBa2Cu3O7-δ films by laser chemical vapor deposition
Preparation of (100) CeO2 and (110) YBa2Cu3O7-δ films by laser chemical vapor deposition
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激光化学气相沉积法制备(100)CeO2和(110)YBa2Cu3O7-δ薄膜
DOI：
10.1016/j.ceramint.2013.06.041
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发表时间：
2014
影响因子：
5.2
通讯作者：
T. Goto
中科院分区：
文献类型：
--
作者：
P. Zhao;A. Ito;T. Goto
采用激光化学气相沉积法制备了CeO2和YBa2Cu3O7−δ(YBCO)薄膜。在 975–1088 K 下制备的 (100) 取向 CeO2 薄膜由具有 CeO2{111} 平面金字塔形帽的柱状晶组成。沉积速率为 3.0–5.4 µm h−1。在 1004 K 的沉积温度下，在 (100) 取向的 CeO2 薄膜上制备了 (110) 取向的 YBCO 薄膜。(110) 取向的 YBCO 薄膜呈现楔形晶粒。
CeO2and YBa2Cu3O7−δ(YBCO) films were prepared by laser chemical vapor deposition. The (100)-oriented CeO2films prepared at 975–1088 K consisted of columnar grains with pyramidal caps of the CeO2{111} planes. The deposition rate was 3.0–5.4 μm h−1. The (110)-oriented YBCO films were prepared on the (100)-oriented CeO2films at a deposition temperature of 1004 K. The (110)-oriented YBCO films showed wedge-shaped grains.