Optical Programming/Electrical Erasing Memory Device Based on Low-Voltage Organic Thin-Film Transistor
Optical Programming/Electrical Erasing Memory Device Based on Low-Voltage Organic Thin-Film Transistor
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DOI：
10.1109/ted.2012.2187296
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发表时间：
2012-03
影响因子：
3.1
通讯作者：
Wei Wang;Dongge Ma;Qiang Gao
中科院分区：
文献类型：
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作者：
Wei Wang;Dongge Ma;Qiang Gao
我们展示了一种低工作电压的五苯有机薄膜晶体管（OTFT），其超薄聚合物聚（甲基丙烯酸甲酯-甲基丙烯酸缩水甘油酯）作为栅极介电层。在光照条件下，阈值电压（VT）随施加的圆栅电压（VG）不断正向移动，工作电流（IDS）随施加的圆栅电压（VG）不断增大。关灯后，VT和IDS都衰减到亚稳态，并保持很长时间后才衰减回初始值。这种OTFT在具有非易失性记忆效应的光电探测器或通过光编程(P)和电擦除(E)的存储器中具有潜在的应用。在照明条件下，经过正VG脉冲后，IDS变为一个较大的值（一个状态），经过负VG脉冲后，IDS迅速恢复到一个较小的初始值（零状态）。目前采用简单工艺制备的OTFT具有工作电压低、重复性好等优点，具有良好的应用前景。
We demonstrated a low-operation-voltage pentacene organic thin-film transistor (OTFT) with an ultrathin polymer poly(methyl methacrylate co glycidyl methacrylate) as the gate dielectric layer. Under illumination, the threshold voltage (VT) continuously shifted positively, and the operation current (IDS) successively increased with the applied circular gate voltage (VG). After the light switchoff, both VT and IDS decayed to a metastable state and remained for a long time before decaying back to the initial value. This OTFT has a potential application in a photodetector with nonvolatile memory effect or in a memory by optical programming (P) and electrical erasing (E). The IDS was turned into a large value (one state) after P by a positive VG pulse under illumination and quickly returned to a small initial value (zero state) after E by a negative VG pulse. The present OTFT fabricated by a simple fabrication process exhibits a good practical foreground due to the low operation voltage and the good repeatability.