Twist-angle dependence of moiré excitons in WS(2)/MoSe(2) heterobilayers.

Twist-angle dependence of moiré excitons in WS(2)/MoSe(2) heterobilayers.
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DOI:
10.1038/s41467-020-19466-6
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发表时间:
2020-11-18
影响因子:
16.6
通讯作者:
Deng H
Deng H
中科院分区:
综合性期刊1区
文献类型:
--
作者:
Zhang L;Zhang Z;Wu F;Wang D;Gogna R;Hou S;Watanabe K;Taniguchi T;Kulkarni K;Kuo T;Forrest SR;Deng H

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Moiré lattices formed in twisted van der Waals bilayers provide a unique, tunable platform to realize coupled electron or exciton lattices unavailable before. While twist angle between the bilayer has been shown to be a critical parameter in engineering the moiré potential and enabling novel phenomena in electronic moiré systems, a systematic experimental study as a function of twist angle is still missing. Here we show that not only are moiré excitons robust in bilayers of even large twist angles, but also properties of the moiré excitons are dependant on, and controllable by, the moiré reciprocal lattice period via twist-angle tuning. From the twist-angle dependence, we furthermore obtain the effective mass of the interlayer excitons and the electron inter-layer tunneling strength, which are difficult to measure experimentally otherwise. These findings pave the way for understanding and engineering rich moiré-lattice induced phenomena in angle-twisted semiconductor van der Waals heterostructures. Here, the authors show that the properties of the moiré excitons in twisted van der Waals bilayers of transition metal dichalcogenides are determined by the moiré reciprocal lattice period, and can be controlled via twist-angle tuning.
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