Cooling of a semiconductor by luminescence up-conversion
Cooling of a semiconductor by luminescence up-conversion
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DOI：
10.1063/1.124660
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发表时间：
1999-08-30
影响因子：
4
通讯作者：
Weimann, G
中科院分区：
文献类型：
--
作者：
Finkeissen, E;Potemski, M;Weimann, G
我们报道了在GaAs量子阱中观察到声子介导的发光上转换。这开启了在半导体中进行光诱导晶格冷却的可能性。在适当的条件下，用重空穴激子能量的光泵送样品，我们观察到轻空穴激子发射，其位于激发能以上10 meV左右。使用外部磁场和激发激子状态的分辨率提供了一个内部温度计来监测样品温度。当泵密度为4 W cm（-2）时，温度下降可达初始温度的10%。(C) 1999年美国物理研究所。[s0003 - 6951(99) 00435 - 0]。
We report the observation of phonon-mediated up-conversion of luminescence in a GaAs quantum well. This opens the possibility of light-induced lattice cooling in a semiconductor. Under appropriate conditions, pumping the sample with light at the energy of the heavy-hole exciton, we observe light-hole exciton emission, which lies similar to 10 meV above the excitation energy. The use of an external magnetic field together with the resolution of excited excitonic states provides an internal thermometer to monitor the sample temperature. Temperature drops as large as 10% of the initial temperature are observed for pump densities of 4 W cm(-2). (C) 1999 American Institute of Physics. [S0003-6951(99)00435-0].