Effect of spin polarization on electron recombination dynamics in bulk intrinsic GaAs
Effect of spin polarization on electron recombination dynamics in bulk intrinsic GaAs
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自旋极化对块状本征 GaAs 中电子复合动力学的影响
DOI:
10.7498/aps.57.6593
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发表时间:
2008-10
期刊:
影响因子:
--
通讯作者:
Yu Hua-Liang
中科院分区:
文献类型:
--
作者:
Lai Tian-Shu;Teng Li-Hua;Lin Wei-Zhu;Huang Zhi-Ling;Wen Jin-Hui;Yu Hua-Liang
Time-resolved circularly polarized and linearly polarized pump-probe spectroscopies are used to study the recombination dynamics of spin-polarized and spin-nonpolarized electrons as well as its evolution with photon energy for an intrinsic GaAs at 9.6K. It is found that the spin polarization has a significant influence on the electron recombination dynamics. The spectroscopic measurements give the same recombination lifetime only when measured near the bottom of the conduction band, but different recombination lifetimes were measured in higher excess-energy states. It is pointed out that the recombination lifetime measured by circularly polarized pump-probe spectroscopy, rather than that measured by linearly-polarized pump-probe spectroscopy, should be used to solve for the lifetime of electron-spin coherence from time-resolved Faraday spectroscopic data. The theoretical calculation agrees well with the experimental results.