Deep blue light-emitting diodes based on Cd1-xZnxS@ZnS quantum dots
Deep blue light-emitting diodes based on Cd1-xZnxS@ZnS quantum dots
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DOI：
10.1088/0957-4484/20/7/075202
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发表时间：
2009-02-18
期刊：
影响因子：
3.5
通讯作者：
Lee, Seonghoon
中科院分区：
文献类型：
--
作者：
Bae, Wan Ki;Kwak, Jeonghun;Lee, Seonghoon
我们展示了基于化学合成Cd1-xZnxS@ZnS量子点（QDs）的深蓝发光二极管。采用聚（N，N′-双（4-丁基苯基）-N，N′-双（苯基）联苯胺）（poly- tpd）和4,4′，N，N′-二苯基咔唑（CBP）复合膜在Cd1-xZnxS@ZnS量子点上进行了方便的空穴注入和均匀的量子点沉积。该器件具有中等的导通电压（6 V）和外量子效率（0.1-0.3%），具有全宽半宽窄的光谱带宽，具有彩色饱和的蓝色发射特性
We demonstrate deep blue light-emitting diodes based on chemically synthesized Cd1-xZnxS@ZnS quantum dots (QDs). Composite films of poly-(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (poly-TPD) and 4,4',N,N'-diphenylcarbazole (CBP) are employed for facilitated hole injection into Cd1-xZnxS@ZnS QDs and uniform QD deposition. The fabricated devices possess moderate turn-on voltage (6 V) and external quantum efficiency (0.1-0.3%), and exhibit color-saturated blue emission with a narrow spectral bandwidth of full width at half maximum