Ferroelectric gate transistors
Ferroelectric gate transistors
复制标题
铁电栅极晶体管
DOI：
10.1080/10584589508019350
复制
发表时间：
1995
期刊：
影响因子：
--
通讯作者：
H. Lin
中科院分区：
文献类型：
--
作者：
T. Rabson;T. Rost;H. Lin
本文报道了一种具有锂氧化物栅绝缘层的场效应晶体管的特性。已经观察到与极化切换一致的栅极特性的偏移。与最近发表的一些铁电栅晶体管的理论模型的结果进行了比较。讨论了缓冲层在栅结构中的优缺点。
Abstract The characteristics of a field effect transistor with a lithium niobate gate insulator are reported. Shifts in the gate characteristics consistent with polarization switching have been observed. Comparisons with the results of some of the recently published theoretical models for ferroelectric gate transistors are made. Advantages and disadvantages of buffer layers in the gate structure are also discussed.