Selective-Area Growth of AlInAs Nanowires
Selective-Area Growth of AlInAs Nanowires
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AlInAs 纳米线的选择性区域生长
DOI：
10.1149/09806.0149ecst
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Tomioka Katsuhiro
中科院分区：
文献类型：
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作者：
Tai Yoshiki;Gamo Hironori;Motohisa Junichi;Tomioka Katsuhiro
超晶格(SL)共振隧穿场效应晶体管(RTFET)是未来场效应管的候选器件之一。然而，利用各种晶格失配系统形成高质量的SL是困难的。纳米线(NW)结构在避免失配位错方面显示出良好的前景，这表明可以为RTFET形成晶格失配的InGaAs/Alinas SL NW。我们报道了用于InGaAs/Alinas NW RTFET的AlInAs NW的选择性区域生长。
A superlattice (SL) resonant tunneling field-effect transistor (RTFET) is one of the candidates for future FETs. However, there is a difficulty in forming high-quality SL with various lattice mismatched systems. The nanowire (NW) structure shows promise in terms of avoiding the misfit dislocation, suggesting that a lattice-mismatched InGaAs/AlInAs SL NW can be formed for the RTFET. We report on the selective-area growth of AlInAs NWs forInGaAs/AlInAs NW RTFETs.