Low threshold, diode end-pumped Nd3+:GdVO4 self-Raman laser
Low threshold, diode end-pumped Nd3+:GdVO4 self-Raman laser
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DOI：
10.1016/j.optmat.2006.10.006
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发表时间：
2007-08
影响因子：
3.9
通讯作者：
Wang Baoshan;T. Huiming;P. Jiying;M. Jieguang;Gao Lanlan
中科院分区：
文献类型：
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作者：
Wang Baoshan;T. Huiming;P. Jiying;M. Jieguang;Gao Lanlan
紧凑型二极管端泵浦自激 Nd3+:GdVO4 拉曼激光器实现了低阈值、高效拉曼激光输出。在 10kHz 的脉冲重复频率 (PRF) 和 1.8W 泵浦功率下实现了 100mW 的最大拉曼输出功率。从二极管到拉曼激光器的光学效率为5.6%，斜率效率为8%。 SRS 过程的最低阈值在 PRF 为 5kHz 时仅为 400mW。通过使用 LBO 晶体产生二次谐波，还产生了 3mW 588nm 黄色激光。当拉曼激光输出时，在 Nd3+:GdVO4 晶体中观察到强烈的蓝色发射，我们将其贡献给晶体中 Nd3+ 的上转换。
Low threshold, high efficient Raman laser output has been realized from a compact, diode end-pumped, self-stimulating Nd3+:GdVO4Raman laser. Maximum Raman output power of 100mW was achieved at a pulse repetition frequency (PRF) of 10kHz with 1.8W pump power. The optical efficiency is 5.6% from diode to Raman laser and the slope efficiency is 8%. The lowest threshold for the SRS process is only 400mW at a PRF of 5kHz. By generating second harmonics using a LBO crystal, 3mW 588nm yellow laser was also produced. A strong blue emission was observed in the Nd3+:GdVO4crystal when the Raman laser output, we contribute this for the upconversion of the Nd3+in the crystal.