Influence of annealing temperatures on the structural, optical and electrical properties of SnSe films
Influence of annealing temperatures on the structural, optical and electrical properties of SnSe films
复制标题
DOI：
10.1007/s10854-018-8846-1
复制
发表时间：
2018-05-01
影响因子：
2.8
通讯作者：
Terra, F. S.
中科院分区：
文献类型：
--
作者：
El-Menyawy, E. M.;Azab, A. A.;Terra, F. S.
在乙二胺存在下，用溶剂热法合成了SnSe晶体。采用热蒸发技术在玻璃和石英衬底上生长了SnSe薄膜。将膜在150和300 A摄氏度下退火。研究了退火温度对SnSe薄膜的结构、形貌、光学和电学性能的影响。结果表明，沉积态SnSe薄膜具有正交结构。在150 A摄氏度退火后，薄膜的结晶度增加。通过在300 A ℃下退火，薄膜部分转变为具有六方结构的SnSe 2。计算并分析了吸收系数和折射率。结果表明，沉积态和退火态薄膜都存在直接和间接跃迁，光学带隙随退火温度的升高而增大。计算了沉积态和退火态薄膜的光学介电常数和自由载流子浓度与其有效质量的比值。从电学测量，薄膜显示半导体行为。研究了电阻率、载流子浓度和载流子迁移率随加热温度和退火温度的变化。
Crystalline SnSe was synthesized by solvothermal method based on reacting tin chloride with selenium in the presence of ethylenediamine. SnSe thin films were grown on glass and quartz substrates by using thermal evaporation technique. The films were annealed at 150 and 300 A degrees C. The influence of annealing temperatures on structural, morphological, optical and electrical properties of SnSe thin films has been investigated. The results showed that the as-deposited SnSe thin films have orthorhombic structure. Upon annealing at 150 A degrees C, the crystallinity of the films increased. By annealing at 300 A degrees C, the films are partially transformed to SnSe2 with hexagonal structure. The absorption coefficient and refractive index were calculated and analyzed. It is found that the as-deposited and annealed films have direct and indirect transitions with optical band gap increases with increasing annealing temperature. The optical dielectric constant and the ratio of the free carriers concentration to its effective mass were calculated for as-deposited and annealed films. From electrical measurements, the films showed semiconductor behavior. The resistivity, carriers concentration and carriers mobility are studied as a function of heating temperature and annealing temperature.