High-quality quantum point contacts in GaN/AlGaN heterostructures -: art. no. 073108
High-quality quantum point contacts in GaN/AlGaN heterostructures -: art. no. 073108
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DOI：
10.1063/1.1862339
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发表时间：
2005-02-14
影响因子：
4
通讯作者：
Molnar, RJ
中科院分区：
文献类型：
--
作者：
Chou, HT;L端scher, S;Molnar, RJ
我们研究了 GaN/AlGaN 异质结构中量子点接触的传输特性。我们器件的电导显示出良好的量子化平台，在高垂直磁场中自旋分裂。 g 因子为 2.55，源自点接触子带分裂与垂直磁场的关系。除了很好分辨的平台之外，我们还观察到“0.7 结构”的证据，这主要是在 GaAs 系统中研究的。 (C) 2005 年美国物理研究所。
We study the transport properties of quantum point contacts in a GaN/AlGaN heterostructure. The conductance of our devices shows well-quantized plateaus, which spin-split in high perpendicular magnetic field. The g factor is 2.55, as derived from the point contact subband splitting versus perpendicular magnetic field. In addition to the well-resolved plateaus, we also observe evidence of "0.7 structure" which has been mainly investigated in the GaAs system. (C) 2005 American Institute of Physics.