Amorphous silicon nitride thin films implanted with cerium ions for cathodoluminescent light source
Amorphous silicon nitride thin films implanted with cerium ions for cathodoluminescent light source
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阴极发光光源用铈离子注入非晶氮化硅薄膜
DOI：
10.1016/j.optmat.2013.02.018
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发表时间：
2013
影响因子：
3.9
通讯作者：
Yoshimasa Kawata
中科院分区：
文献类型：
--
作者：
Akito Chiba;Shinnosuke Tanaka;Wataru Inami;Atsushi Sugita;Kazumasa Takada;Yoshimasa Kawata
将铈离子注入到非晶氮化硅薄膜中，研究了其阴极发光特性。Ce离子分布在离非晶氮化硅表面约20 nm的深度内，并且它们在薄膜中形成三种阳离子。通过注入Ce离子，薄膜的CL分布在405 nm附近的波长。在25-kV电子束激发下，观察到的CL增加超过2.2倍的氮化硅薄膜相比。通过在铈离子注入后采用高温退火工艺，这种增加显著增强。
Cerium ions were implanted into amorphous silicon nitride thin films, and the cathodoluminescence (CL) of the thin films was investigated. The Ce ions were distributed within a depth of around 20 nm from the surface of the amorphous silicon nitride, and they formed three kinds of cations in the thin films. By implanting the Ce ions, the CL of the films was distributed around a wavelength of 405 nm. The CL increase of more than 2.2 times compared to silicon nitride thin films was observed at 25-kV electron beam excitation. This increase was significantly enhanced by adopting a high-temperature annealing process after the cerium-ion implantation.