THE DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN IN0.2GA0.8AS/GAAS STRAINED-LAYER SUPERLATTICE MESA PHOTODIODES
THE DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN IN0.2GA0.8AS/GAAS STRAINED-LAYER SUPERLATTICE MESA PHOTODIODES
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DOI:
10.1007/bf02659635
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发表时间:
1986-07-01
影响因子:
2.1
通讯作者:
DAWSON, LR
中科院分区:
文献类型:
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作者:
BULMAN, GE;ZIPPERIAN, TE;DAWSON, LR