THE DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN IN0.2GA0.8AS/GAAS STRAINED-LAYER SUPERLATTICE MESA PHOTODIODES

THE DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN IN0.2GA0.8AS/GAAS STRAINED-LAYER SUPERLATTICE MESA PHOTODIODES
复制标题

DOI:
10.1007/bf02659635
复制
发表时间:
1986-07-01
影响因子:
2.1
通讯作者:
DAWSON, LR
DAWSON, LR
中科院分区:
工程技术4区
文献类型:
--
作者:
BULMAN, GE;ZIPPERIAN, TE;DAWSON, LR

文献摘要

被引文献

相似文献