Correlation between channel mobility and shallow interface traps in SiC metal–oxide–semiconductor field-effect transistors
Correlation between channel mobility and shallow interface traps in SiC metal–oxide–semiconductor field-effect transistors
复制标题
SiC金属氧化物半导体场效应晶体管中沟道迁移率与浅界面陷阱之间的相关性
DOI：
10.1063/1.1513210
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发表时间：
2002
影响因子：
3.2
通讯作者：
K. Fukuda
中科院分区：
文献类型：
--
作者：
Seiji Suzuki;S. Harada;R. Kosugi;J. Senzaki;W. Cho;K. Fukuda
采用栅控二极管结构测量了碳化硅（SiC）金属氧化物半导体（MOS）场效应晶体管（MOSFET）导带附近的浅界面陷阱密度。对于采用各种栅氧化工艺制备的4 H和6 H-SiC MOSFET，明显发现沟道迁移率与浅界面陷阱密度之间存在密切相关性。这一结果有力地证明了SiC MOSFET的反型沟道迁移率差的一个重要原因是导带边缘和阈值处的表面费米能级之间的高密度浅陷阱。
The shallow interface trap density near the conduction band in silicon carbide (SiC) metal–oxide–semiconductor (MOS) structure was evaluated by making capacitance–voltage measurements with gate-controlled-diode configuration using the n-channel MOS field effect transistors (MOSFETs). The close correlation between the channel mobility and the shallow interface trap density was clearly found for the 4H- and 6H-SiC MOSFETs prepared with various gate-oxidation procedures. This result is strong evidence that a significant cause of the poor inversion channel mobility of SiC MOSFETs is the high density of shallow traps between the conduction band edge and the surface Fermi level at the threshold.