3-D Finite Element Monte Carlo Simulations of Scaled Si SOI FinFET With Different Cross Sections
3-D Finite Element Monte Carlo Simulations of Scaled Si SOI FinFET With Different Cross Sections
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DOI：
10.1109/tnano.2014.2367095
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发表时间：
2015
影响因子：
2.4
通讯作者：
D. Nagy;M. Elmessary;M. Aldegunde;R. Valin;A. Martinez;J. Lindberg;W. Dettmer;D. Peric;A. García-Loureiro;K. Kalna
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文献类型：
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作者：
D. Nagy;M. Elmessary;M. Aldegunde;R. Valin;A. Martinez;J. Lindberg;W. Dettmer;D. Peric;A. García-Loureiro;K. Kalna
采用三维有限元蒙特卡罗（MC）模拟和二维薛定谔量子修正，模拟了栅长为12.8和10.7 nm的纳米级Si SOI FinFET。这些非平面晶体管研究了两个横截面：矩形和三角形，以及两个沟道方向：（100）和（110）。10.7 nm栅长矩形FinFET也模拟使用3-D非平衡绿色函数（NEGF）技术和MC模拟的结果进行了比较。12.8和10.7nm栅极长度的矩形状FinFET给出比三角状形状的每周长大约33- 37%的驱动电流，但是当通过沟道面积归一化时，三角状FinFET优于矩形状FinFET。具有（100）沟道取向的器件在缩放到12.8 nm和10.7 nm栅极长度时提供比具有（110）沟道的对应器件大约11%的驱动电流。在低漏极偏压下，由三维NEGF模拟得到的ID-VG特性与MC结果有很好的一致性。在高漏极偏压下，NEGF从约VG-VT = 0.3V高估了导通电流，因为NEGF模拟不包括具有界面粗糙度和电离杂质的散射。
Nanoscaled Si SOI FinFETs with gate lengths of 12.8 and 10.7 nm are simulated using 3-D finite element Monte Carlo (MC) simulations with 2-D Schrodinger-based quantum corrections. These nonplanar transistors are studied for two cross sections: rectangular-like and triangular-like, and for two channel orientations: (100) and (110). The 10.7-nm gate length rectangular-like FinFET is also simulated using the 3-D nonequilibrium Green's functions (NEGF) technique and the results are compared with MC simulations. The 12.8 and 10.7 nm gate length rectangular-like FinFETs give larger drive currents per perimeter by about 33- 37% than the triangular-like shaped but are outperformed by the triangular-like ones when normalised by channel area. The devices with a (100) channel orientation deliver a larger drive current by about 11% more than their counterparts with a (110) channel when scaled to 12.8 nm and to 10.7 nm gate lengths. ID - VG characteristics obtained from the 3-D NEGF simulations show a remarkable agreement with the MC results at low drain bias. At a high drain bias, the NEGF overestimates the on-current from about VG - VT = 0.3 V because the NEGF simulations do not include the scattering with interface roughness and ionized impurities.