Dramatic strain induced modification of the low field anisotropic magnetoresistance in ultrathin manganite films
Dramatic strain induced modification of the low field anisotropic magnetoresistance in ultrathin manganite films
复制标题
DOI：
10.1063/1.3021083
复制
发表时间：
2008-11
影响因子：
4
通讯作者：
M. Egilmez;M. Saber;A. Mansour;R. Ma;K. Chow;J. Jung
中科院分区：
文献类型：
--
作者：
M. Egilmez;M. Saber;A. Mansour;R. Ma;K. Chow;J. Jung
研究了不同衬底上生长的超薄La基锰氧化物薄膜的各向异性磁阻。研究发现，根据应变状态的不同，其中一些系统的AMR超过100%，甚至可以变号。与传统铁磁体中AMR的几个百分点的变化相比，这些变化是非常戏剧性的。讨论了AMR这些巨大变化背后的机制。
The authors investigated the anisotropic magnetoresistance (AMR) in ultrathin La-based manganite films grown on various substrates. It was found that depending on the strain state, the AMR in some of these systems exceeds 100% and can even change sign. These changes are very dramatic when compared to the few percent change in AMR in conventional ferromagnets. The mechanism behind these large changes in the AMR is discussed.